該RA30H1317M1是30-watt RF的MOSFET放大器模塊12.5-volt移動電臺在向工作在135-175-MHz范圍.電池可以直接連接到漏極增強型MOSFET晶體管.輸出功率和作為柵極漏電流增加電壓的增加.隨著一門圍繞3.5V電壓（最小），輸出功率和漏電流大幅增加.額定輸出功率變為可在4V（典型值）和5V（最大）.在VGG=5V,典型柵極電流1 mA.該模塊是專為非線性調頻調制，但可能也可用于線性調制通過設置靜態漏電流隨柵極電壓和輸出功率控制與輸入功率.
特征
•增強型MOSFET晶體管(IDD≅0@ VDD=12.5V, VGG=0V)
• Pout>30W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
•寬帶頻率范圍：135-175MHz
•低功耗控制電流IGG=1mA (typ)在VGG=5V
•模塊尺寸：66 x 21 x 9.88 mm
•線性操作有可能通過設置靜態漏電流隨柵極電壓和輸出功率控制與輸入功率
•RA30H1317M1-101是RoHS兼容產品
•RoHS遵守表明該地段后由信“G”扣分.
深圳浩時健電子有限公司是國內三菱射頻電子元器件專業供應商，三菱射頻產品廣泛應用用于移動通信基站、直放站、衛星通信、有線電視、雷達、無線本地環等領域。積極向國內生產和科研單位推薦新產品：日本三菱公司生產的系列射頻功率放大模塊、系列射頻場效應三極管。多年以來已為國內眾多的生產廠家、科研院所、大專院校、國家重要單位維修部門的生產、維修、研制開發新品、教學實驗等提供了準確、快捷、方便的配套供貨服務。在經營運作上,我公司批發、零售兼營，可向用戶長期保證貨源，并保證供貨品種的技術指標滿足相關的國際檢測標準。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
RD100HHF1、RD70HVF1、RD70HUF2、RD70HHF1、RD60HUF1、RD45HMF1、RD35HUF2、RD30HUF1、RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、RD09MUP2、RD07MVS1B、RD07MVS1、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、RD05MMP1、RD04HMS2、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD02MUS2B、RD01MUS2、RD00HHS1、RD00HVS1等RD全系列。
三菱（MITSUBISHI）：（射頻功率放大模塊）
RA60H4452M1、RA60H4047M1、RA60H3847M1、RA60H1317M1A、RA60H1317M、RA55H4452M、RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、RA45H4452M、RA45H4047M、RA45H4045MR、RA35H1516M、RA33H1516M1、RA30H4552M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、RA08N1317M、RA07N4452M、RA07N4047M、RA07N3340M、RA07M4452MSA、RA07M4452M、RA07M4047MSA、RA07M4047M、RA07M3843M、RA07M3340M、RA07M2127M、RA07M1317MSA、RA07M1317M、RA07M0608M、RA07H4452M、RA07H4047M、RA07H3340M、RA07H0608M、RA06H8285M、RA05H9595M、RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、RA01L8693MA等RA全系列。
本公司長期經營日本MITSUBISHI三菱全系列射頻功率放大模塊，保證全新原裝，正品現貨，最新批號無鉛環保，假一罰十。深圳、香港公司備有大量現貨庫存，可提供樣品，現特價熱賣中。
